(RTTNews) - Marvell Technology, Inc. (MRVL), a leader in data infrastructure semiconductor solutions, has launched the industry's first 2nm custom Static Random Access Memory - SRAM. This innovation ...
A new technical paper titled “Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors” was published by researchers at The Pennsylvania State ...
A new technical paper titled “Design of Energy-Efficient Cross-coupled Differential Photonic-SRAM (pSRAM) Bitcell for High-Speed On-Chip Photonic Memory and Compute Systems” was published by ...
SAN FRANCISCO – Dec. 10, 2024 – CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the ...
Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
Abstract: 4H-SiC static random-access memory (SRAM) was suggested and demonstrated for extreme-environment applications. The 4H-SiC SRAMs show the proper memory states with high static noise margins ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback