Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: This paper presents the design of a megawatts (MW) level modular multilevel converter (MMC) phase-leg for 13.8 kV medium voltage (MV) grid based on Wolfspeed 10 kV SiC MOSFET XHV-9 half ...
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