Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...
Abstract: In this paper we present simulation based radiation damage modeling of 4H silicon carbide (SiC) using the technology computer aided design (TCAD) tools for up to 1 kV forward and backward ...
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