The new capabilities are available starting today, with some features in beta or public preview.

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Abstract: As emerging non-volatile memory (NVM) devices, Ferroelectric Field-Effect Transistors (FeFETs) present distinctive opportunities for the design of ultra-dense and low-leakage memory systems.

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When your team knows exactly what to do, when to do it and how to adjust along the way, even the toughest objectives start to ...