Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Abstract: Containers have emerged as a prevalent mechanism for deploying software applications within cloud data centers, thereby abstracting many operational details from developers and transferring ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback