Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

There are many applications today using high voltage MOSFETs and IGBTs, which would benefit from a higher voltage part. Examples are sweep circuits, radar pulse modulators, capacitor discharge ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

A fully functional, fast switching and printable transistor in cheap plastic has just been invented. A fully functional, fast switching and printable transistor in cheap plastic is invented by ...