High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. ERIC R. MOTTO Powerex Inc. High power IGBT module ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...