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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors

Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

Digital Storage And Memory Projections For 2026, Part 2

AI is driving demand and higher prices for DRAM and NAND into 2026.  Products using non-volatile memories to replace NOR and ...
EDN

How can 3D FeFETs substitute NAND flash for low-latency storage

The part 1 of this two-article series outlined the NAND flash technology and how it transitioned from 2D to 3D NAND flash. The article also explained the current challenges in the way of density ...
ExtremeTech

New manufacturing technology enables vertical 3D NAND transistors, higher capacity SSDs

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Nanowerk

Printed organic transistors achieve record performance and 3D circuit density

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...
Electronic Design

Surrounding Gate Transistors May Improve DRAM

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...