Robert J. Mears, CTO and Founder of Atomera will present a paper on the advanced applications of Oxygen Inserted (OI) Epitaxy (one class of Atomera’s MST® film) in the semiconductor industry.

In a study published in Journal of the American Chemical Society, a team led by Prof. Song Li from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences ...

The HALO 201 MBE is a gas analysis system for molecular beam epitaxy applications. Hiden’s HALO systems are intended for RGA, gas analysis and process monitoring applications such as leak detection, ...

Scientists have grown thin films of two different crystalline materials on top of each other using an innovative technique called “dative epitaxy.” The researchers discovered the method by surprise.

This technique is significant in the development of advanced materials, particularly for applications in microelectronics, nanotechnology, optoelectronics, and renewable energy technologies. The ...

The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air ...

InP-based epitaxial wafer demand will be promising for niche-market applications, particularly optical communication uses bolstered by continuous construction of large-size datacenters and ...

Ganvix, the US startup company developing blue vertical cavity surface-emitting lasers (VCSELs) based on nanoporous gallium nitride (GaN) semiconductor material, has agreed a collaboration with ...

Gallium nitride (GaN) has emerged as a key semiconductor in the evolution of power electronics thanks to its wide bandgap, high critical electric field and superior carrier mobility. Recent advances ...

--(BUSINESS WIRE)--Atomera Incorporated (Nasdaq: ATOM): Room 320 (Level 3, Hawaii Convention Center), Honolulu, HI Robert J. Mears, CTO and Founder of Atomera will present a paper on the advanced ...